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IPI26CN10N G

IPI26CN10N G

MOSFET N-CH 100V 35A TO262-3

IPI26CN10N G

IPI26CN10N G

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Part No :

IPI26CN10N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 35A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
586158 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPI26CN10N G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI26CN10N G is available at GangBo-ic.com, Please review product page below for detailed information, including IPI26CN10N G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI26CN10N G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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