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IPSH6N03LB G

IPSH6N03LB G

MOSFET N-CH 30V 50A TO251-3

IPSH6N03LB G

IPSH6N03LB G

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Part No :

IPSH6N03LB G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 50A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
243824 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
IPSH6N03LB G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 15 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
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