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NVB6412ANT4G

NVB6412ANT4G

MOSFET N-CH 100V 58A D2PAK-3

NVB6412ANT4G

NVB6412ANT4G

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Part No :

NVB6412ANT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 58A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
812481 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
NVB6412ANT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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