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NVD4809NHT4G

NVD4809NHT4G

MOSFET N-CH 30V 9A/58A DPAK-3

NVD4809NHT4G

NVD4809NHT4G

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Part No :

NVD4809NHT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 9A/58A DPAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
011601 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
NVD4809NHT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2155 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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