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SQ2361EES-T1-GE3

SQ2361EES-T1-GE3

MOSFET P-CH 60V 2.5A SOT23-3

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SQ2361EES-T1-GE3

SQ2361EES-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SQ2361EES-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 60V 2.5A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
851585 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
SQ2361EES-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:150mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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