CAP CER 13PF 250V C0G/NP0 0805
MOSFET N-CH 30V 35A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 31mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 4.5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 870 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TLC530FTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 330V 7A TO220-3 |
|
IRFPS35N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 34A SUPER247 |
|
IPD60R950C6IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
PHB153NQ08LT,118NXP Semiconductors |
MOSFET N-CH 75V 75A D2PAK |
|
SPP20N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO220-3 |
|
NP100P06PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
SI7664DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
NTB30N20GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 30A D2PAK |
|
IRFB4215IR (Infineon Technologies) |
MOSFET N-CH 60V 115A TO220AB |
|
IRFBE30SVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
UPA2812T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
|
SI4322DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A 8SO |
|
TK40P03M1(T6RDS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A DPAK |