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IRF7779L2TR1PBF

IRF7779L2TR1PBF

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Part No :

IRF7779L2TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 375A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
541454 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IRF7779L2TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:375A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET L8
Package / Case:DirectFET™ Isometric L8
IRF7779L2TR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7779L2TR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7779L2TR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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