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SUD50N02-09P-GE3

SUD50N02-09P-GE3

MOSFET N-CH 20V 20A TO252

BAV170T-7-G

BAV170T-7-G

DIODE GEN PURPOSE

SUD50N02-09P-GE3

SUD50N02-09P-GE3

Image is for reference, please contact us to get the real picture

Part No :

SUD50N02-09P-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 20A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
861286 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SUD50N02-09P-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 10 V
FET Feature:-
Power Dissipation (Max):39.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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