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HRG3216P-5111-D-T1

HRG3216P-5111-D-T1

RES SMD 5.11K OHM 0.5% 1W 1206

IPI16CN10N G

IPI16CN10N G

MOSFET N-CH 100V 53A TO262-3

IPI16CN10N G

IPI16CN10N G

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Part No :

IPI16CN10N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 53A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
470147 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
IPI16CN10N G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16.2mOhm @ 53A, 10V
Vgs(th) (Max) @ Id:4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3220 pF @ 50 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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