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FQD2N80TM_WS

FQD2N80TM_WS

MOSFET N-CH 800V 1.8A DPAK

FQD2N80TM_WS

FQD2N80TM_WS

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Part No :

FQD2N80TM_WS

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 1.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
270127 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
FQD2N80TM_WS PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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