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IRF9Z24NSTRR

IRF9Z24NSTRR

MOSFET P-CH 55V 12A D2PAK

IRF9Z24NSTRR

IRF9Z24NSTRR

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Part No :

IRF9Z24NSTRR

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 55V 12A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
309930 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
IRF9Z24NSTRR PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z24NSTRR is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9Z24NSTRR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9Z24NSTRR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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