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IXFH6N100F

IXFH6N100F

MOSFET N-CH 1000V 6A TO247

IXFH6N100F

IXFH6N100F

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Part No :

IXFH6N100F

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 6A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10346 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
IXFH6N100F PDF
Type Description
Series:HiPerRF™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:-
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXFH)
Package / Case:TO-247-3
IXFH6N100F is available at GangBo-ic.com, Please review product page below for detailed information, including IXFH6N100F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFH6N100F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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