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SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

MOSFET N-CH 600V 12A TO263

SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

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Part No :

SIHB12N60ET1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 12A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
Type Description
Series:E
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:937 pF @ 100 V
FET Feature:-
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB12N60ET1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHB12N60ET1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHB12N60ET1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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