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RQ6E055BNTCR

RQ6E055BNTCR

MOSFET N-CH 30V 5.5A TSMT6

RQ6E055BNTCR

RQ6E055BNTCR

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Part No :

RQ6E055BNTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 5.5A TSMT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10114 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
RQ6E055BNTCR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:355 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT6 (SC-95)
Package / Case:SOT-23-6 Thin, TSOT-23-6
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