RES 4.37K OHM 0.1% 1/4W 1210
CAP ALUM 120UF 20% 16V RADIAL
MOSFET N-CH 60V 13A/50A 8WDFN
SENSOR PROX INDUCTIVE 2MM CYLIND
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 880 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 46W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STW25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO247 |
|
DMP3036SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.7A PWRDI3333-8 |
|
HUF76419D3Rochester Electronics |
MOSFET N-CH 60V 20A IPAK |
|
FQP19N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 19.4A TO220-3 |
|
IPD60R600P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO252-3 |
|
IRF7450PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
RQ5C030TPTLROHM Semiconductor |
MOSFET P-CH 20V 3A TSMT3 |
|
IRLL024NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 3.1A SOT223 |
|
DMG1013UWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 820MA SOT323 |
|
DMTH4004LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252-4L |
|
MCH6320-TL-WRochester Electronics |
MOSFET P-CH 12V 3.5A MCPH6 |
|
PMF370XN,115Nexperia |
MOSFET N-CH 30V 870MA SOT323 |
|
DMG7401SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 9.8A PWRDI3333-8 |