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SI2329DS-T1-GE3

SI2329DS-T1-GE3

MOSFET P-CH 8V 6A SOT23-3

SI2329DS-T1-GE3

SI2329DS-T1-GE3

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Part No :

SI2329DS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 6A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11465 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
SI2329DS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:1485 pF @ 4 V
FET Feature:-
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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