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NTK3139PT1G

NTK3139PT1G

MOSFET P-CH 20V 660MA SOT723

NTK3139PT1G

NTK3139PT1G

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Part No :

NTK3139PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 660MA SOT723
Catalog
Transistors - FETs, MOSFETs - Single
Availability
652665 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
NTK3139PT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 16 V
FET Feature:-
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-723
Package / Case:SOT-723
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