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RM30P55LD

RM30P55LD

MOSFET P-CHANNEL 55V 30A TO252-2

RM30P55LD

RM30P55LD

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Part No :

RM30P55LD

Manufacturer
Rectron USA
Description
MOSFET P-CHANNEL 55V 30A TO252-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
502650 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 30 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-2
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RM30P55LD is available at GangBo-ic.com, Please review product page below for detailed information, including RM30P55LD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM30P55LD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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