MOSFET P-CHANNEL 55V 30A TO252-2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3500 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 65W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-2 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN2R0-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
NTMFS6D1N08HT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 17A/89A 5DFN |
|
NTTFS5C454NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/85A 8WDFN |
|
FDS3590Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.5A 8SOIC |
|
FQPF22P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 13.2A TO220F |
|
AOT280LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 20.5A/140A TO220 |
|
IXFH14N80PWickmann / Littelfuse |
MOSFET N-CH 800V 14A TO247AD |
|
IPP220N25NFDRochester Electronics |
MOSFET N-CH 250V 61A TO220-3 |
|
TK8A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 8A TO220SIS |
|
SIHB24N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A D2PAK |
|
3LN01M-TL-HRochester Electronics |
MOSFET N-CH 30V 150MA SC70/MCPH3 |
|
SIR170DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 23.2A/95A PPAK |
|
FQD2N100TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1000V 1.6A DPAK |