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0456040.DRSD

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FUSE 40A 125VAC NANO SMD

TK60S06K3L(T6L1,NQ

TK60S06K3L(T6L1,NQ

MOSFET N-CH 60V 60A DPAK

TK60S06K3L(T6L1,NQ

TK60S06K3L(T6L1,NQ

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Part No :

TK60S06K3L(T6L1,NQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 60A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
072507 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TK60S06K3L(T6L1,NQ PDF
Type Description
Series:U-MOSIV
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 10 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
TK60S06K3L(T6L1,NQ is available at GangBo-ic.com, Please review product page below for detailed information, including TK60S06K3L(T6L1,NQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK60S06K3L(T6L1,NQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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