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TPN2R203NC,L1Q

TPN2R203NC,L1Q

MOSFET N-CH 30V 45A 8TSON

IRGIB10B60KD1P

IRGIB10B60KD1P

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TPN2R203NC,L1Q

TPN2R203NC,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPN2R203NC,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 30V 45A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12395 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 25 - May 29 2025
PDF
TPN2R203NC,L1Q PDF
Type Description
Series:U-MOSVIII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2230 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 42W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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