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FCMT199N60

FCMT199N60

MOSFET N-CH 600V 20.2A POWER88

FCMT199N60

FCMT199N60

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Part No :

FCMT199N60

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 20.2A POWER88
Catalog
Transistors - FETs, MOSFETs - Single
Availability
730258000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
FCMT199N60 PDF
Type Description
Series:SuperFET® II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 100 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power88
Package / Case:4-PowerTSFN
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