MOSFET N-CH 30V 9.6A/58A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 11.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1456 pF @ 12 V |
FET Feature: | - |
Power Dissipation (Max): | 1.4W (Ta), 52W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD16413Q5ATexas Instruments |
MOSFET N-CH 25V 24A/100A 8VSON |
|
HUF75939S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK7Y25-40B/C3115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF9HN65M2STMicroelectronics |
MOSFET N-CH 650V 5.5A TO220FP |
|
NTTFS4C58NTAGRochester Electronics |
MOSFET N-CH 30V 48A 8WDFN |
|
FCMT199N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A POWER88 |
|
DMP6110SFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 4.2A 6UDFN |
|
STWA63N65DM2STMicroelectronics |
MOSFET N-CH 650V 60A TO247 |
|
SIHP12N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220AB |
|
IPI50R350CPRochester Electronics |
MOSFET N-CH 550V 10A TO262-3 |
|
PMV30UN2VLNexperia |
MOSFET N-CH 20V 5.4A TO236AB |
|
IRF7483MTRPBFRochester Electronics |
MOSFET N-CH 40V 135A DIRECTFET |
|
CSD19501KCSTexas Instruments |
MOSFET N-CH 80V 100A TO220-3 |