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IRFH5010TRPBF

IRFH5010TRPBF

MOSFET N-CH 100V 13A/100A 8PQFN

IRFH5010TRPBF

IRFH5010TRPBF

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Part No :

IRFH5010TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 13A/100A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
682168 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
IRFH5010TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
IRFH5010TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH5010TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH5010TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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