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TK7S10N1Z,LQ

TK7S10N1Z,LQ

MOSFET N-CH 100V 7A DPAK

TK7S10N1Z,LQ

TK7S10N1Z,LQ

Image is for reference, please contact us to get the real picture

Part No :

TK7S10N1Z,LQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 7A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
261926 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
TK7S10N1Z,LQ PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:48mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 10 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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