CAP 1000 UF 20% 50 V
MOSFET N-CH 850V 20A TO263
MULTI-PAIR 12COND 24AWG 500'
FEED-THROUGH TERMINAL
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 850 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 330mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 63 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1660 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 540W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak-HV) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF234Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BUK7E3R5-60E,127Nexperia |
MOSFET N-CH 60V 120A I2PAK |
|
HUF75637P3Rochester Electronics |
MOSFET N-CH 100V 44A TO220-3 |
|
SI4488DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 3.5A 8SO |
|
IPB04N03LATIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
SSM3K15ACTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3C |
|
IRLR3802TRPBFRochester Electronics |
IRLR3802 - HEXFET POWER MOSFET |
|
SQ2389ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
FDS6900SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISS73DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.4A/16.2A PPAK |
|
STP4LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 3A TO220 |
|
NTB6413ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK |
|
DN2450N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 230MA TO243AA |