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FQPF13N10

FQPF13N10

MOSFET N-CH 100V 8.7A TO220F

16612

16612

3M ACCUSPRAY 1.4MM ATOMI

FQPF13N10

FQPF13N10

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Part No :

FQPF13N10

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 8.7A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
146158 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
FQPF13N10 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 4.35A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF13N10 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF13N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF13N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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