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MTB30P06VT4G

MTB30P06VT4G

MOSFET P-CH 60V 30A D2PAK

MW020

MW020

MAGNETORESISTIVE ELEMENT

MTB30P06VT4G

MTB30P06VT4G

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Part No :

MTB30P06VT4G

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 60V 30A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11342 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
MTB30P06VT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2.19 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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