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FDFMA2N028Z

FDFMA2N028Z

MOSFET N-CH 20V 3.7A 6MICROFET

FDFMA2N028Z

FDFMA2N028Z

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Part No :

FDFMA2N028Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 3.7A 6MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
646521000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 11 - Jan 15 2025
PDF
FDFMA2N028Z PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:68mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:455 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-VDFN Exposed Pad
FDFMA2N028Z is available at GangBo-ic.com, Please review product page below for detailed information, including FDFMA2N028Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFMA2N028Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

Phone: 00852-52612101

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