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IPP600N25N3GXKSA1

IPP600N25N3GXKSA1

MOSFET N-CH 250V 25A TO220-3

IPP600N25N3GXKSA1

IPP600N25N3GXKSA1

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Part No :

IPP600N25N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 250V 25A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
780978 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPP600N25N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 100 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP600N25N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP600N25N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP600N25N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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