MOSFET N-CH 75V 76A TO220AB
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 8.4mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 109 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4020 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FCH20N60Rochester Electronics |
MOSFET N-CH 600V 20A TO247-3 |
|
DMN3021LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.8A 6UDFN |
|
DMN3027LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.3A PWRDI3333-8 |
|
SI2318CDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 5.6A SOT23-3 |
|
IPP80N04S4L04AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3-1 |
|
BSP315PL6327HTSA1Rochester Electronics |
MOSFET P-CH 60V 1.17A SOT223-4 |
|
SI7190DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 18.4A PPAK SO-8 |
|
SIHH11N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 11A PPAK 8 X 8 |
|
RZR040P01TLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
|
AON6558Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 25A/28A 8DFN |
|
IRFU320PBFVishay / Siliconix |
MOSFET N-CH 400V 3.1A TO251AA |
|
DMP3056LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.3A SOT-26 |
|
APT10026JLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 30A ISOTOP |