MOSFET N-CH 900V 11A TO247-3
Type | Description |
---|---|
Series: | SuperMESH™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 880mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 152 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI7846DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
|
SPI07N65C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DKI06108Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 47A TO252 |
|
SUD50P08-25L-E3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252 |
|
SIRA02DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
IRFR9220PBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
|
FDP027N08B-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 120A TO220-3 |
|
DMN2300UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.3A 3DFN |
|
SI8823EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 4MICRO FOOT |
|
TSM4NB60CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A ITO220AB |
|
VN2110K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 100V 200MA SOT23-3 |
|
APT50M65LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A TO264 |
|
STL15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 7A POWERFLAT HV |