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IPD90N03S4L02ATMA1

IPD90N03S4L02ATMA1

MOSFET N-CH 30V 90A TO252-3

IPD90N03S4L02ATMA1

IPD90N03S4L02ATMA1

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Part No :

IPD90N03S4L02ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPD90N03S4L02ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:9750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N03S4L02ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD90N03S4L02ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD90N03S4L02ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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