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SI3430DV-T1-GE3

SI3430DV-T1-GE3

MOSFET N-CH 100V 1.8A 6TSOP

SI3430DV-T1-GE3

SI3430DV-T1-GE3

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Part No :

SI3430DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 1.8A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11919 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
SI3430DV-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.14W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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