N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSM085P03CV RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 64A 8PDFN |
|
IRFZ44NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
|
FDD3570Rochester Electronics |
MOSFET N-CH 80V 10A TO252 |
|
NTLJS5D0N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.2A 6PQFN |
|
RSD080N06TLROHM Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
|
IXFK300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A TO264 |
|
BUZ73ALHXKSA1Rochester Electronics |
MOSFET N-CH 200V 5.5A TO220-3 |
|
IRF710STRLPBFVishay / Siliconix |
MOSFET N-CH 400V 2A D2PAK |
|
SPW24N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24.3A TO247-3 |
|
DMN4800LSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.6A 8SO |
|
RJK0701DPN-E0#T2Rochester Electronics |
MOSFET N-CH 75V 100A TO220AB |
|
BUK7M45-40EXNexperia |
MOSFET N-CH 40V 19A LFPAK33 |
|
SPB11N60S5ATMA1Rochester Electronics |
MOSFET N-CH 600V 11A TO263-3-2 |