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IRF200B211

IRF200B211

MOSFET N-CH 200V 12A TO220AB

IRF200B211

IRF200B211

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Part No :

IRF200B211

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 12A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12043 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRF200B211 PDF
Type Description
Series:HEXFET®, StrongIRFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 50 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF200B211 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF200B211 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF200B211 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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