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MOSFET N-CH 560V 1.8A TO252-3
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| Type | Description |
|---|---|
| Series: | CoolMOS™ |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 560 V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id: | 3.9V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 190 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 25W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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