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SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

MOSFET N-CH 200V 2.6A PPAK SC70

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

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Part No :

SIA456DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 2.6A PPAK SC70
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18484 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 16 - Jan 20 2025
PDF
SIA456DJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 100 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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