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IPD900P06NMATMA1

IPD900P06NMATMA1

MOSFET P-CH 60V 16.4A TO252

IPD900P06NMATMA1

IPD900P06NMATMA1

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Part No :

IPD900P06NMATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 16.4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
789178 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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