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R6009JND3TL1

R6009JND3TL1

MOSFET N-CH 600V 9A TO252

25064.1

25064.1

M40X1.5 STRAIGHT THROUGH

R6009JND3TL1

R6009JND3TL1

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Part No :

R6009JND3TL1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 9A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12566 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id:7V @ 1.38mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 100 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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