MOSFET N-CHANNEL 60V 50A TO252-2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2050 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-2 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RRH140P03GZETBROHM Semiconductor |
MOSFET P-CH 30V 14A 8SOP |
|
STU6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A IPAK |
|
NTP65N02RGRochester Electronics |
MOSFET N-CH 25V 7.6A/58A TO220AB |
|
STL66N3LLH5STMicroelectronics |
MOSFET N-CH 30V 80A POWERFLAT |
|
TSM340N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 30A TO252 |
|
R6009JND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 9A TO252 |
|
STP10N80K5STMicroelectronics |
MOSFET N-CH 800V 9A TO220 |
|
IPP60R250CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO220-3 |
|
RSH090N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 9A SOP8 |
|
UJ3C065080T3SUnitedSiC |
MOSFET N-CH 650V 31A TO220-3 |
|
NTMS4N01R2GRochester Electronics |
MOSFET N-CH 20V 3.3A 8SOIC |
|
SI4825DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 14.9A 8SO |
|
BUK724R5-30C118Rochester Electronics |
N-CHANNEL POWER MOSFET |