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IPD40N03S4L08ATMA1

IPD40N03S4L08ATMA1

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Part No :

IPD40N03S4L08ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 40A TO252-3-11
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19350 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2025
PDF
IPD40N03S4L08ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1.52 pF @ 15 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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