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STF11N60DM2

STF11N60DM2

MOSFET N-CH 600V 10A TO220FP

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STF11N60DM2

STF11N60DM2

Image is for reference, please contact us to get the real picture

Part No :

STF11N60DM2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 10A TO220FP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11920 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
STF11N60DM2 PDF
Type Description
Series:MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:614 pF @ 100 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
STF11N60DM2 is available at GangBo-ic.com, Please review product page below for detailed information, including STF11N60DM2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STF11N60DM2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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