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IPI90R800C3XKSA1

IPI90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO262-3

IPI90R800C3XKSA1

IPI90R800C3XKSA1

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Part No :

IPI90R800C3XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 6.9A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPI90R800C3XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.1 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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