MOSFET N-CH 55V 55A DPAK
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2107 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS6B14NWFT1GRochester Electronics |
MOSFET N-CH 100V 5DFN |
|
STN4NF06LSTMicroelectronics |
MOSFET N-CH 60V 4A SOT-223 |
|
IXTA3N110Wickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO263 |
|
IPA95R750P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 950V 9A TO220 |
|
AO6401AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 5A 6TSOP |
|
STH2N120K5-2AGSTMicroelectronics |
MOSFET N-CH 1200V 1.5A H2PAK-2 |
|
PCP1302-TD-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A SOT89/PCP-1 |
|
TK3A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 2.5A TO220SIS |
|
FDP22N50NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO220-3 |
|
IRF520PBFVishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
BSC040N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TDSON |
|
DMT10H009LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 13A/50A PWRDI |
|
R6004ENJTLROHM Semiconductor |
MOSFET N-CH 600V 4A LPTS |