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IRFI1010NPBF

IRFI1010NPBF

HEXFET POWER MOSFET

IRFI1010NPBF

IRFI1010NPBF

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Part No :

IRFI1010NPBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
498349 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
PDF
IRFI1010NPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
IRFI1010NPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFI1010NPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFI1010NPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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