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FQP6N80C

FQP6N80C

MOSFET N-CH 800V 5.5A TO220-3

FQP6N80C

FQP6N80C

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Part No :

FQP6N80C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 5.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
508250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FQP6N80C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP6N80C is available at GangBo-ic.com, Please review product page below for detailed information, including FQP6N80C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP6N80C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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