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IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

MOSFET N-CH 60V 90A TO252-3

19C300PA1K/SZ75945

19C300PA1K/SZ75945

PRESSURE-JZ STAINLESS

IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

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Part No :

IPD90N06S4L05ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
62500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPD90N06S4L05ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8.18 pF @ 25 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N06S4L05ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD90N06S4L05ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD90N06S4L05ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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