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IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

MOSFET N-CH 80V 200A HSOG-8

IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

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Part No :

IAUS200N08S5N023ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 200A HSOG-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 40 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOG-8-1
Package / Case:8-PowerSMD, Gull Wing
IAUS200N08S5N023ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUS200N08S5N023ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUS200N08S5N023ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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