MOSFET N-CH 1200V 20A TO264
Type | Description |
---|---|
Series: | POWER MOS V® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 650 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 9500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 625W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 (L) |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EKI06051Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 85A TO220-3 |
|
BSC032N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/98A TDSON |
|
SSM3J353F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 2A S-MINI |
|
ISS17EP06LMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 300MA SOT23-3 |
|
IXFA3N120-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 3A TO263 |
|
CSD19534Q5ATexas Instruments |
MOSFET N-CH 100V 50A 8VSON |
|
NTTFS4941NTWGRochester Electronics |
MOSFET N-CH 30V 8.3A/46A 8WDFN |
|
C3M0280090JWolfspeed - a Cree company |
SICFET N-CH 900V 11A D2PAK-7 |
|
SCT3040KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 55A TO247N |
|
IPA60R099C7XKSA1Rochester Electronics |
MOSFET N-CH 600V 12A TO220-FP |
|
SIA421DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK SC70-6 |
|
DMN3016LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A 6UDFN |
|
DMG2302UK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 |