MOSFET N-CH 20V 7.9A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 7.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 22mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 8 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 907 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 660mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7E4R3-75C,127Rochester Electronics |
MOSFET N-CH 75V 100A I2PAK |
|
FDB0105N407LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 460A TO263-7 |
|
SPD30N03S2L07GBTMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
FDY302NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 600MA SC89-3 |
|
IPC100N04S51R2ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
AOT27S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 27A TO220 |
|
IRFD9110PBFVishay / Siliconix |
MOSFET P-CH 100V 700MA 4DIP |
|
SSM3J35CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 20V 100MA CST3 |
|
FQB9N50CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A D2PAK |
|
FDU7030BLRochester Electronics |
MOSFET N-CH 30V 14A/56A IPAK |
|
DMN3033LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.9A SOT-26 |
|
TPCA8045-H(T2L1,VMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 46A 8SOP |
|
IPB50R250CPATMA1Rochester Electronics |
MOSFET N-CH 550V 13A TO263-3 |